SOI MOSFET in weak inversion and weak accumulation

26 February 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (5) , 211-213
https://doi.org/10.1049/el:19870149

Abstract

The subthreshold current of silicon-on-insulator (SOI) MOSFETs has been investigated. The importance of the back interface (silicon film/back insulator) on the subthreshold slope factors is emphasised. On the other hand, the dependence of the slope factors on the back insulator thickness is demonstrated and a comparison of the slope factors for the case of the weak inversion and weak accumulation has been carried out.

Keywords

SUBTHRESHOLD SLOPE FACTORS
SOI MOSFET
BACK INSULATOR THICKNESS
WEAK INVERSION
WEAK ACCUMULATION
SUBTHRESHOLD CURRENT

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