Modeling of substrate current in p-MOSFET's
- 1 September 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (9) , 413-416
- https://doi.org/10.1109/edl.1987.26678
Abstract
It is shown that the substrate current characterization method and modeling approach used for n-MOSFET's is also applicable to p-MOSFET's. The impact ionization rate extracted for holes is found to be 8 × 10 6 exp (-3.7 × 10 6 /E), where E is the electric field. Based on our measurement and modeling result, roughly twice the channel electric field is required for p-MOSFET's to generate the same amount of substrate current as n-MOSFET's. The hot-carrier-induced breakdown voltage is therefore also about two times larger.Keywords
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