Properties of a photovoltaic detector based on an n-type GaN Schottky barrier
- 1 May 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (9) , 6449-6454
- https://doi.org/10.1063/1.364427
Abstract
In this article, we report on the characterization of a photovoltaic detector based on an n-type GaN Schottky barrier. We first present the photovoltaic responsivity above the gap. Its spectrum is explained by the combined effects of absorption and diffusion. The hole diffusion length is estimated to be in the 0.1 μm range with a numerical model. The photoresponse below the gap is also investigated and it is shown that the current generated by the internal photoemission is the major contribution to the photocurrent at reverse biases at 80 K. At room temperature, an additional component to the photocurrent is clearly demonstrated and identified. This extra current stems from the existence of traps. Several spectroscopy techniques are used to characterize those traps. The supplementary current emitted from the traps in the depletion region accounts for the spectral and the temporal behavior of the Schottky photodetector at room temperature.This publication has 20 references indexed in Scilit:
- Mechanisms of recombination in GaN photodetectorsApplied Physics Letters, 1996
- High responsitivity intrinsic photoconductors based on AlxGa1−xNApplied Physics Letters, 1996
- Semiconductor ultraviolet detectorsJournal of Applied Physics, 1996
- Metastability and persistent photoconductivity in Mg-doped p-type GaNApplied Physics Letters, 1996
- Kinetics of photoconductivity in n-type GaN photodetectorApplied Physics Letters, 1995
- Photovoltaic effects in GaN structures with p-n junctionsApplied Physics Letters, 1995
- Visible-blind ultraviolet photodetectors based onGaN p - n junctionsElectronics Letters, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Schottky barrier photodetector based on Mg-doped p-type GaN filmsApplied Physics Letters, 1993
- III-V nitrides for electronic and optoelectronic applicationsProceedings of the IEEE, 1991