Future challenges and directions for nitride materials and light emitters
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 85 (11) , 1750-1751
- https://doi.org/10.1109/5.649652
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- 500°C operation of a GaN/SiC heterojunction bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989