Investigation of InAs and GaSb by high-resolution electron energy-loss spectroscopy

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Abstract
Crystalline InAs and GaSb layers grown by molecular-beam epitaxy have been studied with high-resolution electron energy-loss spectroscopy (HREELS). From the observation of optical surface phonons, resonance frequencies ωTO and oscillator strengths Δε could be determined. The values found for InAs(ωTO=219 cm−1 and Δε=2.9) are in agreement with optically derived data from the literature. As for GaSb, the resonance frequency and the oscillator strength determined by HREELS are at variance with published values. Preliminary results on InAs–GaSb superlattices are presented.

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