Detailed Fourier Transform Infrared (FTIR) Study Of The Temperature Dependence Of The Oxygen Impurity In Silicon
- 29 October 1981
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 0289, 27-29
- https://doi.org/10.1117/12.932114
Abstract
Fl-IR spectra of Czochralski silicon crystals containing interstitial oxygen impurity have been recorded from 15K to room temperature. The major bands due to the oxygen impurity show intensity and frequency changes. These changes can be discussed in terms of a model for the oxygen atom moving in a potential with six-fold axis as described by Hrostowski and Adler.Keywords
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