PN junction formation in CdTe by ion implantation and pulsed ruby laser annealing
- 1 January 1981
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 58 (3-4) , 115-117
- https://doi.org/10.1080/01422448108228605
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Photovoltaic properties of CdTe p-n junctions produced by ion implantationJournal of Applied Physics, 1978
- Cathodoluminescence studies of anomalous ion implantation defect introduction in CdTeJournal of Applied Physics, 1977
- TYPE CONVERSION AND p-n JUNCTIONS IN n-CdTe PRODUCED BY ION IMPLANTATIONApplied Physics Letters, 1968