Second-order optical susceptibility of strained GeSi/Si superlattices
- 14 March 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (6) , 2342-2346
- https://doi.org/10.1063/1.337947
Abstract
A strain‐induced ordered phase has been observed recently in the alloy layers of a GeSi/Si strained‐layer superlattice in which the ordered unit cell is noncentrosymmetric. Using the bond‐charge model of Jha and Bloembergen [Phys. Rev. 171, 891 (1968)], the second‐order susceptibility and the linear electro‐optic (Pockels) coefficient of the GeSi layers are calculated and are found to be comparable in magnitude to those of GaAs.This publication has 7 references indexed in Scilit:
- Linear electro-optic effect in Ge
x
Si
1−
x
/Si strained-layer superlatticesElectronics Letters, 1986
- Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substratesApplied Physics Letters, 1986
- Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical componentsElectronics Letters, 1985
- Observation of Order-Disorder Transitions in Strained-Semiconductor SystemsPhysical Review Letters, 1985
- Second-Order Optical Susceptibilities of III-V SemiconductorsPhysical Review B, 1969
- Nonlinear Optical Susceptibilities in Group-IV and III-V SemiconductorsPhysical Review B, 1968
- Second order optical susceptibility of III–V compoundsPhysics Letters A, 1968