Continuous active T-gate travelling-wave transistor

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Abstract
In the letter experimental results are presented which show that a continuous active gate travelling-wave transistor (TWT) can be used for medium power applications in a wide bandwidth. To reduce the gate resistance, a T-gate configuration has been chosen. This allows us to extend the frequency bandwidth of such a device. Simulations have been performed using small-and large-signal models taking in addition the parasitic capacitances into account A distributed Schottky diode has been used to adjust the phase synchronisation and therefore to achieve fllat gain.

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