Effect of bottom electrodes on resistance degradation and breakdown of (Ba,Sr)TiO/sub 3/ thin films
- 1 March 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components and Packaging Technologies
- Vol. 23 (1) , 128-135
- https://doi.org/10.1109/6144.833051
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO/sub 3/ capacitorsIEEE Transactions on Electron Devices, 1999
- Origin of Dielectric Relaxation Observed for Ba0.5Sr0.5TiO3 Thin-Film CapacitorJapanese Journal of Applied Physics, 1996
- Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra-large-scale integrated dynamic random access memory applicationApplied Physics Letters, 1995
- RuO2/TiN-Based Storage Electrodes for (Ba, Sr)TiO3 Dynamic Random Access Memory CapacitorsJapanese Journal of Applied Physics, 1995
- Preparation and Rapid Thermal Annealing Effect of (Ba, Sr)TiO3 Thin FilmsJapanese Journal of Applied Physics, 1995
- Electrical Properties and Crystal Structure of (Ba0.5Sr0.5)TiO3 Thin Films Prepared on Pt/SiO2/Si by RF Magnetron SputteringJapanese Journal of Applied Physics, 1995
- Barrier layers for realization of high capacitance density in SrTiO3 thin-film capacitor on siliconApplied Physics Letters, 1990
- dc Electrical Degradation of Perovskite‐Type Titanates: II, Single CrystalsJournal of the American Ceramic Society, 1990
- Maxwell-wagner relaxation and degradation of SrTiO3 and BaTiO3 ceramicsFerroelectrics, 1986
- The effects of composition and microstructure on electrical degradation in BaTiO3Ferroelectrics, 1983