Charge transfer in ZnS-type electroluminescence revisited
- 9 March 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (10) , 1256-1258
- https://doi.org/10.1063/1.107422
Abstract
Electrical characteristics of ac-driven, undoped ZnS electroluminescent layers are reported over a large temperature range. They show that, contrary to the currently assumed model of charge transfer wherein electrons are exchanged between the two ZnS interfaces, the operation involves an appreciable bulk charge evolving through capture and recombination of incident carriers. The meaning of the basic electrical observables is revisited. The results have relevance to the operation of blue emitting SrS-based electroluminescent devices.Keywords
This publication has 11 references indexed in Scilit:
- Bulk deep traps in ZnS and their relation to high-field electroluminescenceSemiconductor Science and Technology, 1991
- Electron multiplication in ZnS-type electroluminescent devicesJournal of Applied Physics, 1990
- Thin-film electroluminescent devices using CaS and SrSJournal of Crystal Growth, 1990
- Charge transfer in ZnS-type electroluminescenceJournal of Applied Physics, 1989
- Evidence for recombination-controlled electroluminescence in alkaline-earth sulfidesJournal of Applied Physics, 1987
- ZnS blue emission probing for the study of AC thin film electroluminescent structuresJournal of Crystal Growth, 1985
- A simple model for the hysteretic behavior of ZnS:Mn thin film electroluminescent devicesJournal of Applied Physics, 1982
- Modeling a.c. thin-film electroluminescent devicesJournal of Luminescence, 1981
- Studies of temperature effects in AC thin-film EL devicesIEEE Transactions on Electron Devices, 1981
- Limitation imposed by field clamping on the efficiency of high-field ac electroluminescence in thin filmsJournal of Applied Physics, 1972