Q-band high isolation GaAs HEMT switches
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 289-292
- https://doi.org/10.1109/gaas.1996.567891
Abstract
In this paper, we present on-wafer measured results of Q-band GaAs HEMT switches. This work benchmarks the state-of-the-art performance of a SPDT switch with 1.6 dB insertion loss and 50 dB isolation at 44 GHz; a SPQT switch with 3 dB insertion loss and 42 dB isolation at 44 GHz. The SPDT switch has isolation of 30-50 dB over a 41-49 GHz bandwidth. The SPQT switch has isolation of 30-48 dB over a 42-47 GHz bandwidth. This is a 20 dB improvement in isolation over reported Q-band FET switches.Keywords
This publication has 4 references indexed in Scilit:
- 60-70 dB isolation 2-19 GHz MMIC switchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A high performance V-band monolithic FET transmit-receive switchPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A high power K/Ka-band monolithic T/R switchPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- DC-40 GHz and 20-40 GHz MMIC SPDT SwitchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987