Microstructure And Mechanical Properties Of Electroplated Cu Films For Damascene Ulsi Metallization
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Copper has been deposited for filling sub-0.5 μm trenches by using electroplating. Electroplating with pulse plating conditions provides the high deposition rate (0.5–1 μm/min) and defect-free filling the 0.25 μm trenches and vias of high aspect ratio (>4:1). Enhanced copper electroplating at the trench bottom has been achieved. The median grain size of electroplated copper was measured to be about 1 jim and the lognormal standard deviation is about 0.4 μm. Strong texture was observed in electroplated Cu film. Low stress of electroplated Cu films and excellent adhesion of plated Cu to sputtered Cu seed were observed.Keywords
This publication has 1 reference indexed in Scilit:
- Selective and Blanket Electroless Copper Deposition for Ultralarge Scale IntegrationJournal of the Electrochemical Society, 1997