Surface Photovoltage Measurement of Hydrogen‐Treated Si Surfaces

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Abstract
A contactless surface photovoltage technique was used to measure surface‐potential barriers resulting from hydrogen termination of silicon surfaces and their evolution as the surfaces gradually oxidized in air at room temperature. Hydrogen termination formed by annealing in a hydrogen ambient was more complete than passivation formed by aqueous HF treatment. In addition, the surface‐potential barrier depended on the wafer orientation and ordering of surface terraces by high temperature hydrogen annealing. Oxides grown at room temperature exhibited higher surface‐potential barriers than oxides grown at elevated temperatures. © 1999 The Electrochemical Society. All rights reserved.

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