Domain configurations in transferred-electron oscillators

1 December 1965

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 1 (10) , 286
https://doi.org/10.1049/el:19650259

Abstract

An analysis is given of the field configuration of the drifting high-field domain in transferred-electron oscillators. It is shown that the field configuration is triangular in most samples used for microwave generation.

Keywords

MICROWAVE
DRIFTING
TRIANGULAR
OSCILLATORS AN ANALYSIS
CONFIGURATIONS IN TRANSFERRED
TRANSFERRED ELECTRON OSCILLATORS
DOMAIN CONFIGURATIONS