V3Si Thin-Film Synthesis by Magnetron Sputtering
- 1 March 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (3A) , L149
- https://doi.org/10.1143/jjap.21.l149
Abstract
V3Si thin-films have been produced on a thermally-oxidized Si wafer by magnetron sputtering from an arc-melted target. The phases, lattice constants and superconducting T c were determined as functions of the substrate temperature and film thickness. The growth orientation of the films was found to change markedly with change in the substrate temperature. V3Si films with T c higher than 15 K have been obtained at a low substrate temperature of about 600°C. This suggests that thermalization, low substrate bombardment and high sputtering rate play an important role in obtaining high-quality V3Si thin-films.Keywords
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