Temperature dependence of intrinsic stress in Fe, Si, and AlN prepared by ion beam sputtering

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Abstract
The intrinsic stress in ion beam sputtered Fe, Si, and AlN films was investigated as a function of deposition temperature. At low deposition temperature (300 K) the intrinsic stress is high and compressive for all materials investigated. With increasing deposition temperature the stress initially decreases gradually followed by a rapid drop for Td >Tm /3. The initial slope of the stress variation with temperature appears to be material dependent, being steepest for iron and shallowest for AlN with silicon falling in between. Unlike AlN and Si, Fe converts from compressive to tensile stress at Td /Tm =0.25, where Tm is the absolute melting temperature. The inverse temperature dependence of the intrinsic stress is explained in terms of the grain growth and annealing of a strained microstructure models. Applying the forward-sputtering model [which relates the intrinsic stress to the elastic energy/mole, EM/(1−ν)D, where E is Young’s modulus of elasticity, D the mass density, M the atomic mass, and ν Poisson’s ratio] it is shown that the temperature dependence of the material properties do not contribute significantly to the intrinsic stress variation with temperature.

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