An extended and unified solution for the semiconductor surface problem at equilibrium
- 1 December 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (12) , 7427-7432
- https://doi.org/10.1063/1.328734
Abstract
An equilibrium solution is presented for the semiconductor surface in terms of the potential, electric field, charge density, and change in mobile-carrier concentrations throughout the semiconductor as a function of the surface potential and bulk doping. These results are an extension of the work initiated by R. H. Kingston and S. F. Neustadter [J. Appl. Phys. 26, 718 (1955)]; and extended by C. E. Young [J. Appl. Phys. 32, 329 (1961)]. The present results cover a wider range of all the parameters involved in the problem; also, through quantities chosen for normalization and through choice of origin, the present results remove a considerable redundancy existing in the previous data. Finally, the identity of the equilibrium surface problem and the equilibrium step-junction problem is demonstrated and explained.This publication has 3 references indexed in Scilit:
- A general solution for step junctions with infinite extrinsic end regions at equilibriumIEEE Transactions on Electron Devices, 1981
- Extended Curves of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a Semiconductor, and Curves of the Electrostatic Potential Inside a SemiconductorJournal of Applied Physics, 1961
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955