The Effect of Doping on the Grain Structure of As-Deposited and High-Temperature Annealed Lpcvd Wsl2 Films on Polysilicon
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnectionsIEEE Transactions on Electron Devices, 1983
- Refractory metal silicon device technologySolid-State Electronics, 1968
- Determination of the Properties of Films on Silicon by the Method of EllipsometryJournal of the Optical Society of America, 1962