A note on the efficiency of reflection amplifiers and locked oscillators

1 January 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 60 (9) , 1112-1113
https://doi.org/10.1109/proc.1972.8870

Abstract

The dc to RF conversion efficiency for reflection amplifiers and locked oscillators employing negative resistance devices such as transferred-electron effect and avalanche diodes is discussed. It is shown that one particular definition of efficiency is more appropriate than another definition sometimes employed.

Keywords

REFLECTION
OSCILLATORS
1F NOISE
FREQUENCY
CIRCUIT NOISE
LOW-FREQUENCY NOISE
SIGNAL TO NOISE RATIO
VOLTAGE FLUCTUATIONS
NOISE SHAPING
CAPACITANCE

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