1—2-keV Boron implants into silicon
- 1 August 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (8) , 397-399
- https://doi.org/10.1109/EDL.1985.26168
Abstract
1000-Å-A thick heavily doped layers have been produced in Si by implanting B at energies as low as 1-2 keV. No preamorphization is required and the near-surface random peak is redistributed by diffusion into the deeper channeled region to provide sharp junctions. Doping levels of ∼ 2 × 1020cm-3can be maintained over a region ∼600-Å-thick while maintaining junction depths as shallow as 1000 Å.Keywords
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