Infrared Localized-Vibrational-Mode Absorption of Ion-Implanted Aluminum and Phosphorous in Gallium Arsenide
- 1 December 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (13) , 5223-5229
- https://doi.org/10.1063/1.1659928
Abstract
The localized‐vibrational‐mode absorption of ion‐implanted Al and P in GaAs is observed. The implants were done at room temperature with a flux of ∼3×1012 ion/cm2 sec and fluences of 2.0×1016, 2.8×1016, and 3.7×1016/cm2 at 1 MeV. The Δn=1 transition of Al substitutional on the Ga sublattice and P substitutional on the As sublattice are observed, and liquid‐nitrogen‐temperature absorption measurements are made for isochronal anneals from 200 to 900°C. The Al‐implanted GaAs shows an AlGa local mode near 362 cm−1 and GaAs implanted with P shows a band near 355 cm−1 similar to melt‐doped crystals, but with increased linewidths. From the integrated absorption, it is estimated that nearly all of the Al and P is AlGa and PAs after 900°C anneal, and the site symmetry is approximately tetrahedral.This publication has 19 references indexed in Scilit:
- EFFECT OF ION-IMPLANTATION DAMAGE ON THE OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDEApplied Physics Letters, 1970
- Anneal behavior of defects in lon-lmplanted GaAs diodesMetallurgical Transactions, 1970
- Infra-red absorption due to localized modes of vibration of impurity complexes in ionic and semiconductor crystalsAdvances in Physics, 1969
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969
- ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGIONApplied Physics Letters, 1969
- Electron microscope investigation of damage structure in gallium-arsenide bombarded with neon ionsRadiation Effects, 1969
- Electrical Properties of Zinc and Cadmium Ion Implanted Layers in Gallium ArsenideJournal of the Electrochemical Society, 1969
- Localized vibrational mode absorption of phosphorus in gallium arsenideJournal of Physics and Chemistry of Solids, 1967
- Local Mode Absorption in Compensated Silicon-Doped Gallium ArsenideJournal of Applied Physics, 1966
- Temperature Dependence of the Fundamental and Overtone Absorption Bands of Phosphorus-Doped GaAsPhysical Review Letters, 1966