Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering
- 7 October 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (15) , 1844-1846
- https://doi.org/10.1063/1.106190
Abstract
The growth and properties of thin films of InN on (00.1) sapphire and (00.1) sapphire nucleated by a 400 Å layer of AlN have been found to be radically different. The unnucleated InN films exhibit a mixed morphology (largely textured with lesser amounts of epitaxial grains), a monofunctional thickness dependence on sputtering time, uniformly low mobility and carrier concentration, and high resistivity. In contrast, the AlN‐nucleated overlayers show only heteroepitaxial grains, a bifunctional dependence for the film thickness and surface roughness on sputtering time, higher mobility and carrier concentration, and lower resistivity−even in the limit of an InN overlayer on the order of 20–40 Å.Keywords
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