Electroluminescence and forward bias currents in amorphous silicon p-i-n diodes: the effect of steady state bias and large i-layer thickness
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 198-200, 246-250
- https://doi.org/10.1016/0022-3093(95)00688-5
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Numerical Modelling of Transient Transport Properties in Amorphous SemiconductorsSolid State Phenomena, 1995
- Analysis of double injection transients in amorphous silicon p-i-n diodesJournal of Applied Physics, 1992
- Light induced metastable defects in a-Si:H studied by transient space charge perturbed currentsJournal of Non-Crystalline Solids, 1991