On field emission from a semiconducting substrate
- 18 October 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (16) , 2410-2412
- https://doi.org/10.1063/1.125030
Abstract
A theoretical examination of field emission from the conduction band of a semiconducting substrate is reported. The analysis includes a comparison with Fowler–Nordheim theory, and it is concluded that the formalism of the Fowler–Nordheim theory is incorrect when applied to carriers originating from a semiconducting substrate. The use of a Fowler–Nordheim analysis results in an error in the extraction of the barrier height that is dependent upon the applied electric field across the oxide, conduction band offset, and temperature. A lower limit of the error was calculated to be between 5% and 15%. An analytical expression is developed to describe the field emission of electrons from the conduction band of a semiconductor.Keywords
This publication has 3 references indexed in Scilit:
- Self-consistent modeling of accumulation layers and tunneling currents through very thin oxidesApplied Physics Letters, 1996
- Range of validity of the WKB tunnel probability, and comparison of experimental data and theoryThin Solid Films, 1969
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969