The recursion method and the electronic charge density in diamond and silicon
- 1 January 1983
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 47 (5) , 491-493
- https://doi.org/10.1080/13642812.1983.11643258
Abstract
A method for calculating the electronic charge density in a small region at the centre of a cluster of atoms by means of the recursion method is presented. The results of the application of this technique to diamond and silicon are discussed.Keywords
This publication has 3 references indexed in Scilit:
- The recursion method and a first-principles tight-binding calculation of the band structures of diamond and siliconPhilosophical Magazine Part B, 1983
- Ground-state properties of diamondPhysical Review B, 1981
- First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. I. Self-consistent energy bands, charge densities, and effective massesPhysical Review B, 1981