Magnetic and structural properties of Mn-implanted GaN

High doses ${\text{(10}}^{15}{\text{–5×10}}^{16}\hspace{0.5em}{\mathrm{cm}}^{\text{−2}})$ of ${\mathrm{Mn}}^{+}$ ions were implanted into p-GaN at ∼350 °C and annealed at 700–1000 °C. At the high end of this dose range, platelet structures of ${\mathrm{Ga}}_x{\mathrm{Mn}}_{\text{1−x}}\mathrm{N}$ were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ∼250 K. At low doses, the implanted led to a buried band of defects at the end of the ion range.