Epitaxial Synthesis of GaAs Using a Flow System

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Abstract
The epitaxial synthesis of gallium arsenide utilizing a flow system was achieved using gallium trichloride, arsenic, and hydrogen as reactants, and oriented single crystals of as substrates. Under the conditions of these experiments, there is almost no difference in growth rates between the “A” orientation of the {111} surface and the “B” orientation of a surface. The rate of growth on a {110} surface is more than twice as great as on a {111} surface, and the rate of growth on a {100} surface is slower by a factor of 1.4 than on a {111} surface.

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