Luminescence of multiple modulation-doped GaAs-As heterojunctions in high magnetic fields
- 15 February 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (5) , 2505-2508
- https://doi.org/10.1103/physrevb.35.2505
Abstract
The luminescence of wide-modulation (500 Å) n-doped multiple quantum wells under high magnetic fields (up to 23) shows the recombination of the electrons and the holes in the lowest Landau level of the three electronic subbands occupied. The luminescence intensity shows an oscillatory behavior with magnetic field corresponding to the depopulation of successive subbands. At a fixed luminescence frequency, the intensity shows a synchronical behavior with magnetoresistance oscillations when the luminescence energy corresponds to deexcitation of electrons with the the Fermi energy.Keywords
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