Hole transport through single and double SiGe quantum dots
- 20 November 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (21) , 3415-3417
- https://doi.org/10.1063/1.1328102
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Single-electron charging in doped silicon double dotsSemiconductor Science and Technology, 1999
- Single-charge tunnelling in n- andp-type strained silicon germanium on silicon-on-insulatorSemiconductor Science and Technology, 1999
- Design and analysis of high-speed random access memory with Coulomb blockade charge confinementIEEE Transactions on Electron Devices, 1999
- Two coupled quantum dots with a continuous density of statesSuperlattices and Microstructures, 1998
- Changes in the Magnetization of a Double Quantum DotPhysical Review Letters, 1998
- Influence of energy level alignment on tunneling between coupled quantum dotsPhysical Review B, 1996
- Single-electron tunneling through a double quantum dot: The artificial moleculePhysical Review B, 1996
- A quantum-dot refrigeratorApplied Physics Letters, 1993
- Single-electron memoryElectronics Letters, 1993
- One-dimensional transport and the quantisation of the ballistic resistanceJournal of Physics C: Solid State Physics, 1988