The capacitively controlled field effect transistor (CCFET) as a new low power gas sensor
- 1 October 1996
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 36 (1-3) , 285-289
- https://doi.org/10.1016/s0925-4005(97)80083-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Simulation of the lateral electrical field for the analysis of threshold voltage instabilities of suspended-gate field-effect transistorsSensors and Actuators B: Chemical, 1993
- Tin dioxide gas sensors. Part 2.—The role of surface additivesJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1988
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975