On the photoresponse of GaAs MESFET's: Backgating and deep traps effect

1 March 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (3) , 373-378
https://doi.org/10.1109/T-ED.1986.22497

Abstract

This work presents certain effects of optical illumination on a GaAs MESFET. The relative roles of the device geometry, hole traps in the channel and backgating are clarified. Experimentally, the optical responsitivity in the range 250 kHz-2.6 GHz is measured. The effects of cw illumination and substrate bias on the device are also examined.

Keywords

TRAPS
PHOTORESPONSE
GHZ
KHZ
GAAS MESFET'S
BACKGATING
EXPERIMENTALLY
CLARIFIED