Gate pulse electrical method to characterize hysteresis phenomena in organic field effect transistor
- 31 December 2008
- journal article
- Published by Elsevier in Organic Electronics
- Vol. 9 (6) , 979-984
- https://doi.org/10.1016/j.orgel.2008.07.013
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxideJournal of Applied Physics, 2007
- Aging effects and electrical stability in pentacene thin film transistorsThin Solid Films, 2007
- Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistorsApplied Physics Letters, 2006
- Flexible organic static induction transistors using pentacene thin filmsApplied Physics Letters, 2005
- Moisture induced surface polarization in a poly(4-vinyl phenol) dielectric in an organic thin-film transistorApplied Physics Letters, 2005
- General observation of n-type field-effect behaviour in organic semiconductorsNature, 2005
- Introduction to Organic Thin Film Transistors and Design of n-Channel Organic SemiconductorsChemistry of Materials, 2004
- Organic thin film transistors: From theory to real devicesJournal of Materials Research, 2004
- Carrier transport and density of state distributions in pentacene transistorsPhysical Review B, 2002
- Organic thin-film transistors for organic light-emitting flat-panel display backplanesIEEE Journal of Selected Topics in Quantum Electronics, 1998