ON THE KINETICS OF THE CVD OF Si FROM SiH2Cl2/H2 AND SiC FROM CH3SiCl3/H2 IN A VERTICAL TUBULAR HOT-WALL REACTOR

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Abstract
The chemical steps of the Si and SiC deposition from DCS/H2 and MTS/H2 respectively, are approached on the basis of a calculation of the homogeneous equilibria. SiCl2 appears to be a major intermediate species in both cases. Supersaturation is found to be very high particularly at low temperature. A calculation of the heat, momentum and mass transfers performed for the DCS/H2 system, is used to validate the choice of the experimental CVD-chamber/substrate assembly (isothermal hot zone reactor, cylindrical geometry). The variations of the deposition rate vs the reciprocal temperature, gas flow rate and total pressure show the occurrence of transitions between CVD processes controlled either by surface reactions, mass transfers or thermodynamic factors
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