Very low threshold current AlGaInp/Ga x In 1−x P strained single quantum well visible laser diode
- 16 August 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (17) , 1375-1377
- https://doi.org/10.1049/el:19900884
Abstract
The successful operation of a separate confinement heterostructure (SCH) AlGalnP/GaxIn1−xP (x = 0.43) strained single quantum well (SSQW) laser has been achieved for the first time. A threshold current of 18 mA at 25°C, the lowest value ever reported for AlGaInP/GaInP lasers, was obtained by a 10 × 200μm index guided laser diode at an emission wavelength of 691 nm.Keywords
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