Measured dependence of lifetime upon local defect density and temperature in depletion layers of epitaxial silicon diodes
- 1 September 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 14 (9) , 634
- https://doi.org/10.1109/T-ED.1967.16074
Abstract
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