Control of Surface Recombination of Si Wafers by an External Electrode

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Abstract
A transparent electrode was placed close to a Si wafer, and a negative or positive voltage up to 2 kV was applied to the electrode with respect to the wafer. The wafer was irradiated through the electrode with a pulsed laser, and the decay of the excess carriers was monitored by the microwave reflectance photoconductivity decay (µ-PCD) method. The carrier lifetime of p- and n-type as-polished wafers was increased by a factor of 3 by application of a 2 kV negative voltage to the electrode. This showed that the surface recombination velocity was controlled by the external electrode. A different tendency was observed for the oxidized wafers, and these results were explained by considering the surface charge and the surface state.