Factors Affecting the Electrical Conductivity of Donor‐Doped Bi4Ti3O12 Piezoelectric Ceramics

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Abstract
High‐temperature piezoelectric ceramics based on W6+‐doped Bi4Ti3O12 (W‐BIT) were prepared by both the conventional mixing oxides and the chemical coprecipitation methods. Sintering was carried out between 800° and 1150°C in air. A rapid densification, >99% of the theoretical density (rhoth) at 900°C/2 h, took place in the chemically prepared W6+‐doped Bi4Ti3O12 ceramics, whereas conventionally prepared BIT‐based materials achieved a lower maximum density, ∼94% of rhoth, at higher temperature (1050°C). The microstructure study revealed a platelike morphology in both materials. Platelike grains were larger in the conventionally prepared W‐BIT‐based materials. The sintering behavior could be related both to the agglomeration state of the calcined powders and to the enlargement of the platelets at high temperature. The W6+‐doped BIT materials showed an electrical conductivity value 2‐3 orders of magnitude lower than undoped samples. The electrical conductivity increased exponentially with the aspect ratio of the platelike grains. The addition of excess TiO2 produced a further decrease of the electrical conductivity.

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