The impact of Ge profile shape on the operation of SiGe HBT precision voltage references

Publisher Website

23 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/bipol.1997.647366

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

The Impact of Ge Grading on the Bias and Temperature Characteristics of SiGe HBT Precision Voltage References
Journal de Physique IV, 1996
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
IEEE Transactions on Electron Devices, 1995
Current gain rolloff in graded-base SiGe heterojunction bipolar transistors
IEEE Electron Device Letters, 1993
A simple three-terminal IC bandgap reference
IEEE Journal of Solid-State Circuits, 1974