Fabrication and characterization of GaAs Schottky barrier photodetectors for microwave fiber optic links
- 1 August 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (3) , 195-196
- https://doi.org/10.1063/1.95207
Abstract
High‐Speed GaAs Schottky barrier photodiodes have been fabricated and characterized. These detectors have 3‐dB bandwidths of 20 GHz and quantum efficiencies as high as 70%. The response of the detectors to light modulated at 1–18 GHz has been directly measured. Microwave modulated optical signals were obtained by using a LiNbO3 traveling wave modulator and by heterodyning two laser diodes.Keywords
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- Transit-Time Considerations in p—i—n DiodesJournal of Applied Physics, 1964