Electron cyclotron resonance microwave-plasma etching
- 1 August 1987
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 65 (8) , 856-858
- https://doi.org/10.1139/p87-131
Abstract
Electron cyclotron resonance microwave-plasma etching of Si and SiO2 using a (CF4 + O2) gas mixture is investigated in a magnetically confined plasma. High etch rates have been obtained at 0.8 Torr pressure, where the etching mechanism may be due primarily to neutral active species (1 Torr = 133 Pa). The high etch rate can be explained by a high dissociation efficiency of the ECR microwave plasma, and the directionality by carbon deposits associated with it. The magnetic confinement is likely to play a role similar to that of ion and electron screening.Keywords
This publication has 0 references indexed in Scilit: