1/f Noise in (AlGa)As/GaAs Heterostructure Van der Pauw element
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (1) , 22-23
- https://doi.org/10.1109/EDL.1987.26537
Abstract
Both the current and Hall terminals of an Al0.3Ga0.7As/ GaAs heterostructure Van der Pauw element show the pure 1/f noise characteristics without any generation-recombination noise with a difference of 17 dBV/√Hz between them. The noise level across the Hall terminals is equal to that of the thermal noise at about 1 kHz, and the minimum magnetic field is estimated from the Hall terminal noise and the maximum magnetic field sensitivity as about 2 nT.Keywords
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