Dependence of the photoreflectance of semi-insulating GaAs on temperature and pump chopping frequency
- 13 June 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (24) , 2058-2060
- https://doi.org/10.1063/1.99580
Abstract
The amplitude of the photoreflectance (PR) spectra of the direct gap of semi-insulating GaAs has been studied as a function of pump chopping frequency (2–4000 Hz) and temperature (25–198 °C). We have been able to deduce a temperature-dependent trap time and hence trap activation energy of 0.70±0.05 eV. Our experiment demonstrates that PR can be used as a contactless method to study deep traps in semiconductors, analogous to deep level transient spectroscopy.Keywords
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