Electrical and optical properties of sputtered amorphous silicon films prepared under a reduced pumping speed
- 1 April 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (7) , 594-596
- https://doi.org/10.1063/1.94013
Abstract
A series of amorphous silicon (a‐Si) films have been deposited by dc sputtering. We have found a new preparation parameter, namely, the pumping speed of the secondary vacuum pump which has a considerable influence on the electronic properties of the material. Samples deposited under a reduced pumping speed possess electrical properties which are extremely sensitive to the presence of hydrogen. Conductivity and photoconductivity may increase over several orders of magnitude with the addition of a relatively small amount of hydrogen.Keywords
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