On the electrical and magnetoresistance properties of Cd3As2-NiAs eutectic
- 1 August 1969
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 2 (8) , 1083-1087
- https://doi.org/10.1088/0022-3727/2/8/304
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Anisotropic InSb-NiSb as an infra-red detectorSolid-State Electronics, 1968
- Liquid Encapsulation Zone Refining (LEZOR)Journal of the Electrochemical Society, 1967
- Der gerichtete Einbau von Schwermetallphasen in GaAsZeitschrift für Naturforschung A, 1966
- Quantum transport effects in cadmium arsenide, effective mass tensor and band structurePhysics Letters, 1966
- Conduction Bands in Cadmium ArsenidePhysica Status Solidi (b), 1966
- Die polarisierende wirkung von zweiphasigem indiumantimonid im ultrarotenSolid-State Electronics, 1964
- Indiumantimonid mit gerichtet eingebauten, elektrisch gut leitenden Einschlüssen: System InSb-NiSbThe European Physical Journal A, 1963
- Physical Properties of Several II-V SemiconductorsPhysical Review B, 1961