Resist Ashing Using Surface-Wave – Produced Plasmas
- 1 January 1990
- journal article
- research article
- Published by Taylor & Francis in Journal of Microwave Power and Electromagnetic Energy
- Vol. 25 (4) , 236-240
- https://doi.org/10.1080/08327823.1990.11688132
Abstract
A new type of plasma asher using surface microwaves propagating on a dielectric line is reported. The ashing process is achieved in aflowing afterglow discharge. A high ashing rate of 3.2 µm/Min over a 5-inch wafer at 230°C is obtained, using pure oxygen at pressures close to 130 Pa. Radiation damage on the substrate is minimized by operating in a flowing afterglow where the ion current on the wafer is barely detectable.Keywords
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