LASER RECOMBINATION TRANSITION IN p-TYPE GaAs
- 15 August 1969
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (4) , 109-110
- https://doi.org/10.1063/1.1652924
Abstract
Data are presented (77°K) showing that laser transitions to either the valence band edge or to the acceptor, or both, are possible in a specific impurity concentration range (2 × 1017−1018/cm3) in GaAs:Zn and GaAs:Cd. These data are observed on a low‐loss crystal structure that is pumped uniformly.Keywords
This publication has 5 references indexed in Scilit:
- Laser Transitions in p-Type GaAs:SiJournal of Applied Physics, 1969
- Laser Transition and Wavelength Limits of GaAsJournal of Applied Physics, 1969
- LASER TRANSITION TO BAND EDGE OR TO IMPURITY STATES IN GaAs:GeApplied Physics Letters, 1969
- THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY-DOPED LIMITApplied Physics Letters, 1968
- The injection laserPhysica Status Solidi (b), 1968