Regrowth of Damaged Layers in Diamond Produced by Ion Implantation
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Doping of diamond by coimplantation of carbon and boronApplied Physics Letters, 1989
- Reactive ion etching of diamondApplied Physics Letters, 1989
- Improved activation of boron-dopant atoms implanted into diamondNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Activation of boron-dopant atoms in ion-implanted diamondsPhysical Review B, 1988
- Optical absorption and luminescence in diamondReports on Progress in Physics, 1979