A large signal non-quasi-static MOS model for RF circuit simulation
- 22 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 163-166
- https://doi.org/10.1109/iedm.1999.823870
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulationIEEE Transactions on Electron Devices, 1998
- An analytical model for the Non-Quasi-Static small-signal behaviour of submicron MOSFETsSolid-State Electronics, 1995