Electron beam induced current measurements of minority carrier diffusion length in gallium nitride
- 21 October 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (17) , 2531-2533
- https://doi.org/10.1063/1.117729
Abstract
Minority carrier diffusion length in epitaxial GaN layers was measured as a function of majority carrier concentration and temperature. The diffusion length of holes in n‐type GaN is found to decrease from 3.4 to 1.2 μm in the doping range of 5×1015–2×1018 cm−3. The experimental results can be fitted by assuming the Einstein relation and by the experimental dependence of hole mobilities on carrier concentration. The low injection carrier lifetime of ∼15 ns, used in the fit, is largely independent of the doping level. The diffusion length, measured for ∼5×1015 and 2×1018 cm−3 dopant concentrations, shows an increase with increasing temperature, characterized by an activation energy Ea of ∼90 meV, independent of the impurity concentration.Keywords
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